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مولانا عاشق حسین سیماب اکبر آبادی

مولانا عاشق حسین سیماب اکبر آبادی
افسوس ہے پچھلے دودن کے ہی آگے پیچھے سے اردو کی بساط شعروادب کے دوپرانے اورنامور مہرے اٹھ گئے۔مولانا عاشق حسین سیماب اکبر آبادی اور مولانا احسان اﷲ خاں تاجورؔ نجیب آبادی آج کل کے عام شاعروں کی طرح شاعر یاادیب ہی نہیں تھے بلکہ صاحب فن استاذ،علم عروض ومعانی وبیان اور لغت و قواعد لسان کے بڑے مبصر اورناقد بھی تھے۔مولانا سیماب۱۸۸۰ء میں آگرہ میں پیداہوئے اورجنوری۱۹۵۱ء میں کراچی میں انتقال کرگئے شاعری اٹھارہ انیس برس کی عمر سے ہی شروع کردی تھی اس طرح گویا مرحوم نے پوری ایک نصف صدی اردو زبان وادب کی خدمت میں بسر کی۔اس مدت میں سینکڑوں چھوٹی بڑی کتابیں اوربے شمار مقالات،نظمیں وغیرہ ان کے قلم سے نکلیں۔ان کے شاگردوں کاحلقہ بھی نہایت وسیع تھا جو خط وکتابت کے ذریعہ ان کی فنی بصیرت ومہارت سے استفادہ کرتارہتاتھا۔ابتدا میں اگرچہ مرزاداغ سے مشورہ سخن کرتے تھے مگر جلد ہی ان کااپنا ایک مخصوص رنگ قائم ہوگیا۔کثرت مطالعہ وفکر عمیق نے ان میں شعروادب سے متعلق ایک مجتہدانہ شان پیداکردی تھی۔وہ کسی کے مقلد نہیں تھے بلکہ ہرچیز اورہرشعری وادبی مسئلہ کے متعلق اپنی ایک جچی تلی سنجیدہ اورمتین رائے رکھتے تھے اورعلیٰ وجہ البصیرت رکھتے تھے۔انھوں نے اپنی زندگی میں بڑے بڑے طوفانی اورانقلابی دوردیکھے جس نے ادب وشعر کی پرانی قدروں کومتزلزل کرکے رکھ دیا اورصورت ومعنی دونوں کے لحاظ سے شاعری کی دنیا میں ہنگامہ برپاکردیا، لیکن مرحوم ایک چٹان بنے اپنے مقام پرکھڑے رہے یہاں تک کہ انقلاب فکروسخن کی موجیں ان سے ٹکرائیں اوربالآخر راستہ کاٹ کر ان سے دامن بچاکر نکل گئیں۔یہ سب کچھ اس لیے ہوسکا کہ مرحوم طرزقدیم کے حامل ہونے کے ساتھ وقت کے جدید تقاضوں سے بھی بے خبر نہ تھے اورقدیم وجدید میں ہم آہنگی پیداکرلینے کاان میں بڑااچھا سلیقہ تھا۔آخر عمر...

Scientific Study of Balance (Al-Mīzān) in the Light of Sūrah Al-Rahmān

This article is an attempt to elaborate the phenomenon of equilibrium prevailing everywhere in the microcosmic and macrocosmic systems associated with universal stability and rhythm. It has been accentuated what is beautifully illuminated in the beginning verses of Sūrah Al-Rahmān successively regarding balance that invites one’s thought towards the well controlled cosmic system as well as with the concept of balance by means of different manners as identified by exegetes and scholars concerning daily life i.e. From simple and common to that of complex issues and intricacies. Qualitative method has been employed for this research while some aspects have also been handled in accordance with quantitative approach. Article also emphasized the series of cause and effect nexus may be declared as self explanatory episode an indication towards a Supreme Force whose widespread control and interference can’t be denied rationally. Sūrah beautifully pictured the physical and metaphysical sketch of balance having many dimensions from man to universe and vice versa as well as from both towards Ultimate Reality whose dominion is limitless where one has to follow peaceful living and to put oneself aside indulging any disruption from ordinary clash to that of nuclear war to be waged.

Material and Design Optimization of Micro-Sensors

Measurements of three fluidic parameters i.e. velocity / flow rate / wall shear stress, pressure and temperature are crucial in many industrial applications including aerospace, automobile, bio-medical and process control etc. The key requirement is to measure these parameters at very fine spatial resolutions, which ultimately depends upon the size of measuring device. Size minimization is possible only through Micro-Electro-Mechanical Systems (MEMS) or mirco-fabrication technology. Therefore, using a novel SOI CMOS fabrication process, this thesis develops a multi-sensing platform that measures these three fluidic parameters, simultaneously.The developed chip has dimensions of just 1.6 mm × 1.6 mm as compared with the minimum chip size of 3.8 mm × 3.8 mm reported previously, thus improving the flow spatial resolution by 82.2%. The developed multi-sensing chip includes a thermal flow sensor, a piezoresistive pressure sensor and a Resistive Temperature Detector (RTD) based temperature sensor. Before integrating these sensors in a single chip, their material and design optimization have been carried out. Ashby‟s materials selection methodology has been used to select the optimum materials for these sensors. Since no MEMS compatible materials database having micro-scale material properties was readily available, therefore first a MEMS materials database has been developed and integrated with a material selection software. The developed materials database along with the derived performance indices for these sensors has then been used to select the candidate materials. Additionally, performance of these candidate materials and the variety of promising designs has also been evaluated experimentally in a two step iterative process using SOI CMOS fabrication technology. In a first iteration, eight thermal flow sensors (i.e. having square / circular membranes and four membrane to heater length ratios), six piezoresistive pressure sensors (i.e. having square membranes, three piezoresistor materials and two piezoresistor layout designs) and twelve RTDs temperature sensors(i.e. having five different materials and six layouts) have been fabricated andexperimental characterized. The best sensor of each type in the first iteration has been further improved when integrated in the final optimized multi sensing chip. The results showed that a thermal flow sensor with a silicon oxide square membrane having a membrane to heater length ratio of 3.35 has the highest sensitivity to area ratio. Similarly, a piezoresistor pressure sensor with a square membrane having p-doped silicon piezoresistors planted at the center of each membrane edges gives maximum sensitivity. The RTDs made of p-doped silicon and having higher L/W ratio exhibited the highest sensitivity and linearity. The optimized thermal, pressure and RTD sensors are much more sensitive than the previously reported such type of sensors. .It is worth highlighting that in addition to being highly sensitive, optimized sensors reported in this research are also CMOS compatible, which make them attractive considering their low cost and ease of integration with other CMOS devices, sensors and circuits.
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